Test Solution
Wafer IV/CV DC characterization encompasses coaxial-based measurements with picoampere-level leakage resolution and triaxial configurations capable of femtoampere-level low-noise measurements. These IV, CV, and P-IV methodologies are extensively employed for semiconductor parameter extraction, with particular efficacy in wafer-level MOSFET characterization. The techniques further enable comprehensive analysis of diverse semiconductor technologies including bipolar junction transistors (BJTs), JFETs, photovoltaic cells, MEMS devices, organic TFT displays, photodiodes, and carbon nanotube-based devices. The fundamental attributes of these measurements make them invaluable for performance optimization, process monitoring, and failure analysis across numerous semiconductor applications.
In recent years, China has prioritized the semiconductor industry, directing substantial resources toward its advancement—particularly focusing on upgrading hardware infrastructure in university laboratories. However, given the budget constraints typical in higher education, it is essential to not only maintain high-precision standards in testing and measurement equipment but also to maximize the future reusability of such resources to avoid inefficiencies. Drawing on years of market engagement and collaborative experience with academic institutions, SEMISHARE has identified the following key criteria for educational probe stations:
● Based on the requirements of university laboratory environment, the equipment can save space under the premise of ensuring high-precision testing.
● Under the premise of not lowering the quality of professional test standards, we can provide more competitive price probe table equipment.
● Easier to operate
● Minimize the workload of operation training
● Stable structure and high test accuracy
● Fast acquisition of measurement data
● Modular customization, easy reconfiguration and upgrade for a wide variety of applications.
● Strong adaptability, when the need to improve and increase, can be re - equipment upgrade and function expansion.
Logic Circuit Wafers
Used in manufacturing microprocessors, memory, and other digital logic circuits. IV testing is required to evaluate transistor parameters such as threshold voltage and leakage current, while CV testing is employed to analyze gate oxide interface quality.
Discrete Device Wafers
Including diodes and transistors, where IV testing measures characteristics like forward voltage drop and reverse breakdown voltage, and CV testing is applied to analyze doping concentration profiles of PN junctions.
Optoelectronic Wafers
Such as photodetectors and lasers, utilize IV testing to assess photocurrent response, while CV testing examines carrier behavior and interface state density.
Wide Bandgap Semiconductor Wafers
Devices based on materials like GaN/SiC require high-precision CV testing to extract interface trap charge information, with IV testing used to evaluate breakdown voltage and conduction characteristics.
Nanomaterial and Flexible Electronics
IV testing analyzes conductivity, and CV testing assesses the uniformity of dielectric layers.
Automotive Electronic Devices
Wide-temperature-range IV/CV testing (-60°C to 300°C) validates device reliability.
Equipment Precision: offers various series of probe stations with positioning accuracies of 10μm, 1μm, and 0.1μm; probing accuracy ≤ ±1.8μm (semi-automatic X-series prober).
Atmospheric Leakage Current Precision: equipped with triaxial platforms capable of fA-level leakage measurements and coaxial platforms supporting pA-level leakage tests, meeting specifications for diverse product requirements.
High-Voltage Leakage Precision: triaxial configuration achieves 10pA@3kV@25°C, while coaxial setup maintains 200pA@3kV@25°C.
Temperature Control Precision: temperature resolution: 0.1°C, temperature stability: ±0.1°C.
System Noise & Parasitic Parameter Suppression: Implements 4TP (Four-Terminal Pair) Kelvin connections to minimize cable parasitic errors. System AC signal noise < 5mVp-p (1GHz), with spectral noise floor ≤ -180 dBVrms/rtHz (≤ 1 MHz).
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