Test Solution
Power devices are the general term for electronic components and electronic devices. As the core of power conversion and circuit control, they utilize the unidirectional conductivity of semiconductors to change voltage, frequency, and phase in electronic devices, mainly performing functions such as power conversion, power amplification, power switching, line protection, inversion (DC to AC), and rectification (AC to DC) in circuits. High power devices generally refer to electronic components with voltage ratings above 1200V and current ratings above 300A, delivering significant output power. They can be classified into semi-controlled devices, fully controlled devices, and uncontrollable devices. Among them, thyristors are semi-controlled devices, with the highest withstand voltage and current capacity; power diodes are uncontrollable devices with simple structure、principle and reliable operation. They can also be classified into voltage-driven devices and current-driven devices. Among them, GTO and GTR are current-driven devices, and IGBT and power MOSFET are voltage-driven devices.
Power semiconductors are widely used in industries such as new energy (wind power, photovoltaic, electric vehicles), consumer electronics, smart grids, and rail transit. As the main power electronic devices, IGBT and MOSFET are widely used in fields such as computers and communications. RF semiconductors based on gallium nitride (GaN) support the construction of 5G base stations and industrial internet systems, while power semiconductors based on silicon carbide (SiC) and IGBTs support the development of new energy vehicles, charging stations, power supplies for base stations/data centers, ultra-high voltage systems, and rail transit systems.
Driven by the steady growth of the power semiconductor market, the performance requirements for semiconductors are continuously increasing. Ensuring that selected high-speed power devices operate stably and reliably in high-temperature, high-radiation, and high-power environments presents significant testing challenges for design engineers. This is especially true for devices made from advanced materials like silicon carbide (SiC) and gallium nitride (GaN), which typically require higher voltage and power levels, faster switching times, and comprehensive testing from wafer level to packaged devices.
We need to understand the dynamic characteristics of power devices: high-power discrete components (such as power transistors, power diodes, and thyristors, with vertical or lateral orientations) and electrical measurements of high-power amplifiers are all part of high-power device testing, typically involving measurements with pulses or DC currents above 500V (high voltage) and/or 1A (high current).
The characterization of wafer properties for high-power devices faces several challenges: the impact of contact resistance between the wafer stage and the back of the wafer on test parameters, the risk of damage to the metal pads of high-current devices, and the increase in leakage current under high voltage and temperature conditions. Addressing how to measure low leakage currents, preventing air from undergoing collision ionization under the influence of electric fields, which can lead to dielectric breakdown between electrodes, is crucial. Additionally, as the air heats up, rapid temperature increases can create arcing phenomena. Ensuring a safe environment for operators to prevent accidental contact in high voltage and varying temperature conditions is also a significant concern.
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**Semiconductor sample：GaN
Needle holder movement accuracy is 0.6um, chuck leakage current is ≤100fA, chuck and microscope XYZ movement accuracy is 0.1um, withstand voltage of 3K-10KV, and withstand temperature of 200℃.
1. Manual loading: The software controls the chuck removal, manually places the wafer on the chuck, opens the adsorption switch to adsorb the wafer, and moves the chuck to the cavity, then controls the chuck to return to its original position.
2. The software controls the motor to move the chuck and the microscope up and down until the surface of the wafer can be preliminarily seen. The automatic focusing function can be used to focus on the surface quickly.
3. Use the automatic straightening function to adjust the wafer water rotation until level.
4. Use high-Voltage fixtures and three-axis probes to tie onto the corresponding PAD accurately.PAD
5. Check the contact between the probe andPADPAD and the connection of the tester. Drip fluorine oil onto the needle and place it under high Voltage for ignition before applying an electrical signal for testing.
1. The chuck and microscope are controlled by software to move the motor, with a movement accuracy of 0.1um.
2. Equipped with a built-in3 zoomthree zoom multi-field of view, triple magnification confocal optical path system, displaying multiple fields of view simultaneously, providing an extremely convenient needle-pointing experience.
3. High-voltage chucks, high-voltage fixtures, and shunt probes can withstand high voltage and current conditions during power testing.
4. Equipped with an integrated high-performance vibration isolation platform and an external isolation barrier, it avoids vibrations caused by operators. The fast vibration recovery time is less than <1 second，providing a high-stability environment for testing.
5. The infrared light curtain can continuously detect. If someone mistakenly approaches the high-voltage part during the high-voltage test, the program will immediately stop running to protect the safety of personnel.
Horizontal device testing (vertical devices can be tested using chuck back electrodes)
